DocumentCode :
3447081
Title :
Efficient fWLR inline monitoring of hot carrier reliability by means of one simple, comprehensive parameter
Author :
Vollertsen, Rolf-Peter ; Nielen, Heiko
Author_Institution :
Infineon Technol. AG, Munich
fYear :
2005
fDate :
17-20 Oct. 2005
Abstract :
Efficient, quantitative inline monitoring of reliability parameters requires considering various dependencies and influences. This work deals with monitoring of conducting hot carrier degradation - but works for other device stress types as well - and develops a single but comprehensive parameter for a control card, that takes into account the device length variation, deviation from a reference device (e.g. the nominal device) and deviation from device reliability model as determined during the process qualification. The derivation and implementation of the method and parameter is described in detail. Alternative parameter calculations are discussed. Examples are given to illustrate the feasibility and usability of the simple and comprehensive parameter
Keywords :
hot carriers; semiconductor device models; semiconductor device reliability; control card; device length variation; device reliability model; device stress types; fWLR inline monitoring; hot carrier degradation; hot carrier reliability; Acceleration; Condition monitoring; Control charts; Degradation; Dielectrics; Hot carriers; Qualifications; Semiconductor device modeling; Stress; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report, 2005 IEEE International
Conference_Location :
S. Lake Tahoe, CA
Print_ISBN :
0-7803-8992-1
Type :
conf
DOI :
10.1109/IRWS.2005.1609572
Filename :
1609572
Link To Document :
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