• DocumentCode
    3447081
  • Title

    Efficient fWLR inline monitoring of hot carrier reliability by means of one simple, comprehensive parameter

  • Author

    Vollertsen, Rolf-Peter ; Nielen, Heiko

  • Author_Institution
    Infineon Technol. AG, Munich
  • fYear
    2005
  • fDate
    17-20 Oct. 2005
  • Abstract
    Efficient, quantitative inline monitoring of reliability parameters requires considering various dependencies and influences. This work deals with monitoring of conducting hot carrier degradation - but works for other device stress types as well - and develops a single but comprehensive parameter for a control card, that takes into account the device length variation, deviation from a reference device (e.g. the nominal device) and deviation from device reliability model as determined during the process qualification. The derivation and implementation of the method and parameter is described in detail. Alternative parameter calculations are discussed. Examples are given to illustrate the feasibility and usability of the simple and comprehensive parameter
  • Keywords
    hot carriers; semiconductor device models; semiconductor device reliability; control card; device length variation; device reliability model; device stress types; fWLR inline monitoring; hot carrier degradation; hot carrier reliability; Acceleration; Condition monitoring; Control charts; Degradation; Dielectrics; Hot carriers; Qualifications; Semiconductor device modeling; Stress; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report, 2005 IEEE International
  • Conference_Location
    S. Lake Tahoe, CA
  • Print_ISBN
    0-7803-8992-1
  • Type

    conf

  • DOI
    10.1109/IRWS.2005.1609572
  • Filename
    1609572