Title :
Physically based predictive model of oxide charging [MOSFET gate oxides]
Author :
Conley, J.F., Jr. ; Lenahan, P.M. ; Wallace, B.D.
Author_Institution :
Dynamics Res. Corp., Beaverton, OR, USA
Abstract :
A combination of statistical thermodynamics and electron spin resonance (ESR) measurements of defects known as E´ centers is used to develop a physically based predictive model of oxide charging. If is found that this model is in excellent agreement with experimental data
Keywords :
MOSFET; annealing; oxidation; paramagnetic resonance; point defects; semiconductor device reliability; semiconductor process modelling; thermodynamics; E´ centers; ESR; MOS gate oxides; Si-SiO2; annealing; building-in reliability; electron spin resonance; oxide charging; physically based predictive model; statistical thermodynamics; thermal oxidation; Damping; Electric variables measurement; Electrons; Magnetic field measurement; Magnetic fields; Needles; Paramagnetic materials; Paramagnetic resonance; Predictive models; Testing;
Conference_Titel :
Integrated Reliability Workshop, 1996., IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-3598-8
DOI :
10.1109/IRWS.1996.583398
