Title :
Simulation and design of 3D geometric RF IC inductors by novel modeling techniques with magPEEC plus FastCap
Author :
Feng, Zhenghe ; Long, Haibo
Author_Institution :
State Key Lab on Microwave & Digital Commun., Tsinghua Univ., Beijing, China
Abstract :
This, paper presents a new peec (partial element equivalent circuit)-based inductor simulation tool, entitled L-Simulator, which employs a novel magPEEC modeling algorithm and an existing FastCap modeling algorithm to address both magnetic and electrical coupling effects, respectively, in 3D conductor+magnet+dielectric geometries, hence, being capable to simulate and design 3D magnetic-enhanced RF IC inductors. Applications on micromachined inductors in a 0.2 μm GaAs HEMT process and magnetic-cored micro inductors in a 0.18 μm CMOS technology are discussed.
Keywords :
CMOS integrated circuits; HEMT integrated circuits; circuit CAD; computational electromagnetics; equivalent circuits; inductors; integrated circuit design; integrated circuit modelling; magnetic devices; radiofrequency integrated circuits; 0.18 micron; 0.2 micron; 3D geometric RFIC inductors; CMOS technology; EM simulation CAD tool; FastCap; GaAs; GaAs HEMT process; conductor/magnet/dielectric geometries; electrical coupling effects; magPEEC; magnetic coupling effects; magnetic-cored micro inductors; magnetic-enhanced inductor structures; micromachined inductors; partial element equivalent circuit method; CMOS technology; Circuit simulation; Coupling circuits; Inductors; Integrated circuit modeling; Magnetic circuits; Radio frequency; Radiofrequency integrated circuits; Semiconductor device modeling; Solid modeling;
Conference_Titel :
Computational Electromagnetics and Its Applications, 2004. Proceedings. ICCEA 2004. 2004 3rd International Conference on
Print_ISBN :
0-7803-8562-4
DOI :
10.1109/ICCEA.2004.1459272
