Thickness and temperature effects on TDDB for DC and dynamic stressing of thin oxide

Author

Soh, Sik-Han ; Naidu, Mamatha ; Hwu, Jennifer ; Sadwick, Larry

Author_Institution

Nat. Semicond. Corp., West Jordan, UT, USA

fYear

1996

fDate

20-23 Oct 1996

Firstpage

153

Lastpage

158

Abstract

In this paper we report the temperature dependence behavior of TDDB (Time Dependent Dielectric Breakdown) of both static and dynamic stress for oxide thickness ranging from 40A to 80A. For the first time, the effects on activation energies of TDDB (as extracted from Arrhenius plot) caused by oxide thickness, DC stress injection polarity, and bipolar stressing are reported and compared. Results indicate that AC stressing giving higher TDDB than TDDB of DC stressing, as reported in earlier work, is not always true, and is strongly influenced by the thickness, temperature and injection polarity. Previous results of anomalous breakdown behavior in ultrathin oxide are also shown to be part of a general trend

Keywords

MOS capacitors; dielectric thin films; electric breakdown; semiconductor device testing; silicon compounds; 40 to 80 angstrom; AC stressing; Arrhenius plot; DC stress injection polarity; DC stressing; MOS capacitor; SiO₂; SiO₂ thin films; TDDB; activation energies; anomalous breakdown behavior; bipolar stressing; dynamic stressing; oxide thickness; static stress; temperature dependence; thin oxide; time dependent dielectric breakdown; ultrathin oxide; Capacitors; Cities and towns; Design for quality; Dielectric breakdown; EPROM; Electric breakdown; Electrodes; Semiconductor device testing; Stress; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop, 1996., IEEE International

Conference_Location

Lake Tahoe, CA

Print_ISBN

0-7803-3598-8

Type

conf

DOI

10.1109/IRWS.1996.583400

Filename

583400