Title :
Characterization of EOS induced defects on submicron devices using 2D spectral imaging
Author :
Bailon, M.F. ; Salinas, P.F. ; Arboleda, J.S. ; Miranda, J.C.
Author_Institution :
Intel Technol. Philippines Inc., Cavite
Abstract :
Localization, identification and characterization of EOS-induced defects found in submicron devices were demonstrated using a new FA procedure. IR photon emission and circuit analysis were used for defect localization while spectral profile of photon emission was utilized for defect finger-printing analysis. Finally, frontside and backside FA methods were done to confirm the actual failure mechanism in the device under analysis
Keywords :
failure analysis; infrared spectroscopy; semiconductor device reliability; semiconductor device testing; 2D spectral imaging; EOS induced defects; IR photon emission; circuit analysis; defect finger-printing analysis; defect localization; failure analysis; failure mechanism; spectral profile; submicron devices; Circuit analysis; Circuit simulation; Earth Observing System; Failure analysis; Image analysis; Integrated circuit technology; Microscopy; Optical imaging; Photoelectricity; Spectral analysis;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2005 IEEE International
Conference_Location :
S. Lake Tahoe, CA
Print_ISBN :
0-7803-8992-1
DOI :
10.1109/IRWS.2005.1609580
