Forecasting field failure rate

An IC failure rate algorithm is presented which computes both average [2, p.34] and instantaneous failure rate based on the following user changeable parameters: gate oxide thickness; B-mode (extrinsic) gate oxide defect density, point-defect wafer yield; fault coverage; discovery distribution t50 and sigma; handling casualty rate, application temperature; gate oxide area, voltage and duty cycle for four different sections; die size; probe overvoltage stress time, voltage and duty cycle; burn-in type (static or dynamic), temperature, time, voltage, duty cycle, and post test efficiency for both point defects and for gross defects; IDDQ voltage and test limit, and coverage; and time in application