• DocumentCode
    3447329
  • Title

    Accurate method for determination of interconnect cross section

  • Author

    Federspiel, X. ; Ney, D. ; Girault, V.

  • Author_Institution
    Philips Semicond., Crolles, France
  • fYear
    2005
  • fDate
    17-20 Oct. 2005
  • Abstract
    Several experimental studies reported an increase of the copper resistivity with decreasing interconnects dimensions (Schafft and Suchle, 1992). However, the accuracy of measurement is limited by the knowledge of sample geometry. As a matter of fact, the geometry of resistors issued from advanced damascene process is varying with process parameters (trench height, diffusion barrier thickness, CMP (chemical mechanical polishing) effect). Taking into consideration Mathiessen empirical relation we established a relation between, resistivity, TCR (temperature coefficient of resistance) and metal cross section to develop an accurate methodology to determine thickness and resistivity of damascene copper samples.
  • Keywords
    copper; electric resistance measurement; electrical resistivity; integrated circuit interconnections; Mathiessen empirical relation; advanced damascene process; chemical mechanical polishing; copper resistivity; damascene copper samples; diffusion barrier thickness; interconnect cross section; process parameters; resistor geometry; trench height; Charge carriers; Chemical processes; Conductivity; Copper; Geometry; Grain boundaries; Impurities; Research and development; Resistors; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report, 2005 IEEE International
  • Print_ISBN
    0-7803-8992-1
  • Type

    conf

  • DOI
    10.1109/IRWS.2005.1609583
  • Filename
    1609583