Title :
Characteristics of a gain switched Fabry-Perot semiconductor laser at 650 nm wavelength
Author :
Oh, K.H. ; Paek, U.-C. ; Kim, D.Y.
Author_Institution :
Dept. of Inf. & Commun., Kwangju Inst. of Sci. & Technol., South Korea
Abstract :
Summary form only given. We have investigated various characteristics of a gain switched InGaAlP Fabry-Perot semiconductor laser operating at 650 nm wavelength for short distance ultra fast optical transmission applications. Optimum gain switching conditions, such as optimum DC bias current value for generation of shortest optical pulse for a given repetition rate, are studied in detail with this laser. The shortest optical pulse was 33.279 psec with this laser. We believe that these results are quite useful for high bit rate optical transmission applications with PMMA based plastic optical fibers.
Keywords :
Fabry-Perot resonators; III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser cavity resonators; optical pulse generation; optical transmitters; semiconductor lasers; 650 nm; Fabry-Perot semiconductor laser; InGaAlP; LD cavity; PMMA based plastic optical fibers; chirping effect; gain switched laser; high bit rate optical transmission; optimum DC bias current value; optimum gain switching conditions; population inversion; relaxation oscillation; short distance ultrafast optical transmission; shortest optical pulse generation; Fabry-Perot; Fiber lasers; Laser mode locking; Laser theory; Optical modulation; Optical pulse generation; Optical pulses; Semiconductor lasers; Space vector pulse width modulation; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-662-1
DOI :
10.1109/CLEO.2001.947697
