Title :
High-speed Si hetero-bipolar transistor with a SiC wide-gap emitter and an ultrathin heavily doped photoepitaxially grown base
Author :
Yamazaki, Tatsuya ; Namura, Itaru ; Sugii, Toshihiro ; Goto, Hiroshi ; Tahara, Akinori ; Ito, Takashi
Author_Institution :
Fujitsu Lab. Ltd., Atsugi, Japan
Abstract :
The authors describe the AC performance of a Si-heterojunction bipolar transistor using a SiC wide-gap emitter with a photoepitaxially grown heavily doped ultrathin base (SiC-EBT). A 30-GHz cutoff frequency and low base resistance were achieved, while retaining an acceptable current gain and preventing tunneling current. The DC characteristics of the SiC-EBT were good enough to use in high-performance LSIs
Keywords :
bipolar integrated circuits; elemental semiconductors; heavily doped semiconductors; heterojunction bipolar transistors; large scale integration; silicon; 30 GHz; AC performance; DC characteristics; Si-SiC; SiC wide-gap emitter; heavily doped ultrathin base; heterojunction bipolar transistor; high-performance LSIs; high-speed device; photoepitaxially grown base; Cutoff frequency; Delay; Doping; Epitaxial growth; Fabrication; Heterojunction bipolar transistors; Indium tin oxide; Laboratories; Silicon carbide; Tunneling;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-0103-X
DOI :
10.1109/BIPOL.1991.160959
