Reliable 20W CW operation of 880 nm laser arrays with aluminum-free active regions

Author

Liu, G.T. ; Finander, M.J. ; Corvini, P.J. ; Salokatve, A. ; Rakennus, K. ; Kuuslahti, T. ; Kongas, J.

Author_Institution

Coherent Semicond. Div., Santa Clara, CA, USA

fYear

2001

fDate

11-11 May 2001

Firstpage

197

Lastpage

198

Abstract

Summary form only given. It has been predicted that direct upper-state pumping of Nd:YAG and Nd:YVO/sub 4/ at 885 nm and 880 nm would yield lower threshold and better slope efficiency as compared to traditional pumping at 808 nm (Lavi et al., 1999; Lavi and Jackel, 2000). Models also predict /spl sim/40% reduction in heat load for direct upper-state pumping compared to pumping at 808 nm. This is important for high power CW operation, where maximizing efficiency and minimizing heat generation is critical. In this work, we report the performance and reliability of compact 20W CW diode bars suitable for this direct upper-state pumping application.

Keywords

laser reliability; optical pumping; semiconductor device measurement; semiconductor laser arrays; 100 W; 20 W; 808 nm; 880 nm; 885 nm; Al/sub 2/O/sub 3/:Ti; CW diode bars; CW tunable Ti:sapphire laser; QCW diode bar; YAG:Nd; YAl5O12:Nd; YVO/sub 4/:Nd; aluminum-free active regions; direct upper-state pumping; direct upper-state pumping application; efficiency; heat generation; heat load reduction; high power CW operation; laser arrays; laser threshold; reliable CW operation; slope efficiency; Bars; Charge carrier processes; Indium phosphide; Laser excitation; Laser modes; Optical arrays; Power lasers; Pump lasers; Semiconductor laser arrays; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-662-1

Type

conf

DOI

10.1109/CLEO.2001.947701

Filename

947701