Title :
Low-voltage high driving capability CMOS buffer used in MEMS interface circuits
Author :
Ha, Yajun ; Li, M.-F. ; Liu, Ai Qun
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
A class-AB low voltage high driving capability CMOS buffer amplifier using improved quasi-complementary output stage and error amplifiers with adaptive loads is developed. Improved quasi-complementary output stage makes it more suitable for low voltage applications, while adaptive load in error amplifier is used to increase the driving capability and reduce the sensitivity of the quiescent current to process variation. The circuit has been fabricated in 0.8 μm CMOS process. With 300 Ω load in a ±1.5 V supply, its output swing is 2.42 V. The mean value of quiescent current for eight samples is 204 μA, with the worst deviation of 17%
Keywords :
CMOS analogue integrated circuits; buffer circuits; differential amplifiers; driver circuits; integrated circuit design; low-power electronics; micromechanical devices; -1.5 to 1.5 V; 0.8 micron; 204 muA; CMOS buffer amplifier; CMOS process; MEMS interface circuits; adaptive loads; driving capability; error amplifiers; low-voltage electronics; output swing; process variation; quasi-complementary output stage; quiescent current; Circuits; Low voltage; Micromechanical devices; Optical amplifiers; Optical buffering; Power amplifiers; Power supplies; Rail to rail amplifiers; Variable structure systems; Voltage control;
Conference_Titel :
Electronics, Circuits and Systems, 1999. Proceedings of ICECS '99. The 6th IEEE International Conference on
Conference_Location :
Pafos
Print_ISBN :
0-7803-5682-9
DOI :
10.1109/ICECS.1999.814410
