Title :
A broadband gain material for widely tunable lasers
Author :
Zhang, J.P. ; Wang, X.J. ; Choa, F.S.
Author_Institution :
Dept. of Comput. Sci. & Electr. Eng., Maryland Univ., Baltimore, MD, USA
Abstract :
Summary form only given. Future broadband networks using WDM technologies require a large number of wavelengths. Widely tunable MQW lasers are key elements to be used. Using the selective-area-growth (SAG) technique, one can change the MQW size and material composition simultaneously. A broader gain profile can be easily obtained. Since the photoluminenscence (PL) peak shifts along the SAG waveguide, one can potentially control the gain profile by using spatial dependent current injection. In this paper we report a semiconductor laser with more then 200 nm tuning range based on this new type of material. The grown active material consists of four 2.5 nm thick InGaAsP 1.42 quantum wells.
Keywords :
gallium arsenide; gallium compounds; indium compounds; laser tuning; masks; photoluminescence; quantum well lasers; semiconductor growth; semiconductor quantum wells; waveguide lasers; wavelength division multiplexing; 2.5 nm; InGaAsP; InGaAsP QWs; MQW size; SAG oxide mask; SAG waveguide; WDM technologies; broadband gain material; broadband networks; broader gain profile; grown active material; photoluminescence peak shifts; selective-area-growth technique; semiconductor laser; spatial dependent current injection; tuning range; widely tunable lasers; Broadband communication; Composite materials; Laser tuning; Optical materials; Quantum well devices; Semiconductor materials; Tunable circuits and devices; WDM networks; Waveguide lasers; Wavelength division multiplexing;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-662-1
DOI :
10.1109/CLEO.2001.947712
