Strain compensated GaAsP/GaAsSb/GaAs 1.3 /spl mu/m lasers grown on GaAs using MBE

Author

Chen, Z.B. ; Johnson, S.R. ; Navarro, C. ; Chaparro, S. ; Xu, J. ; Samal, N. ; Wang, J. ; Cao, Y. ; Yu, S. ; Zhang, Y.-H.

Author_Institution

Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA

fYear

2001

fDate

11-11 May 2001

Firstpage

209

Abstract

Summary form only given. GaAs-based 1.3 /spl mu/m vertical cavity surface emitting lasers (VCSELs) are highly desirable for optical data communication. One of the most promising approaches is to use GaAsSb/GaAs quantum wells as the laser active region. Due to the large compressive strain necessary for the GaAsSb layer to reach 1.3 /spl mu/m, it can be prohibitive to use multiple QWs without compensating the strain. This paper reports GaAsSb/GaAs active layers sandwiched by tensilely strained GaAsP layers. The larger bandgap, of the GaAsP layers also provide stronger electron confinement.

Keywords

III-V semiconductors; compensation; gallium arsenide; gallium compounds; infrared sources; laser transitions; molecular beam epitaxial growth; quantum well lasers; surface emitting lasers; 1.3 micron; GaAs; GaAsP-GaAsSb-GaAs; GaAsP/GaAsSb/GaAs lasers; GaAsSb/GaAs active layers; MBE; bandgap; electron confinement; large compressive strain; laser active region; multiple QWs; optical data communication; strain compensated; tensilely strained GaAsP layers; Capacitive sensors; Diode lasers; Electrons; Gallium arsenide; Luminescence; Optical pulses; Quantum well lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-662-1

Type

conf

DOI

10.1109/CLEO.2001.947713

Filename

947713