Title :
1.6 /spl mu/m single and multiple-stack room temperature quantum dash lasers on InP
Author :
Ronghua Wang ; Stintz, A. ; Varangis, P.M. ; Newell, T.C. ; Li, Huaqing ; Lester, L.F. ; Malloy, K.J.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Abstract :
Summary form only given. We detail the first demonstration of self-assembled quantum dash laser diodes fabricated on InP [001] substrates. By dash, we mean the InAs islands are highly elongated in one dimension. Such self-assembled nanostructures grown by molecular beam epitaxy (MBE) offer a new path for realizing quantum wire lasers. In contrast, previous research on 1D quantum wire semiconductor lasers has been based primarily on MOCVD regrowth into V-shaped grooves.
Keywords :
III-V semiconductors; indium compounds; island structure; laser cavity resonators; molecular beam epitaxial growth; quantum well lasers; self-assembly; semiconductor quantum wires; 1.6 micron; AFM; InAs-InP; InP; five-stack lasers; highly elongated islands; laser cavity orientation; molecular beam epitaxy; multiple-stack room temperature lasers; quantum dash lasers; quantum wire lasers; quantum wire-like dependence; self-assembled nanostructures; self-assembled quantum dash diodes; threshold current density; Diode lasers; Indium phosphide; Molecular beam epitaxial growth; Quantum dots; Self-assembly; Semiconductor lasers; Semiconductor nanostructures; Substrates; Temperature; Wire;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-662-1
DOI :
10.1109/CLEO.2001.947716
