Solution deposition of amorphous IZO films by ultrasonic spray pyrolysis

Author

Pasquarelli, Robert ; Van Hest, Maikel ; Miedaner, Alexander ; Curtis, Calvin ; Perkins, John ; Berry, Joseph ; Hayre, Ryan O. ; Ginley, David

Author_Institution

Colorado Sch. of Mines, Golden, CO, USA

fYear

2009

fDate

7-12 June 2009

Abstract

Atmospheric-pressure solution deposition of the transparent conducting oxide (TCO), amorphous indium-zinc oxide (Â¿-IZO), was investigated as an alternative to traditional vacuum-based physical vapor deposition techniques for photovoltaic applications. Solution processing is attractive due to its ease and potential to lower device manufacturing costs. Here we report on Â¿-IZO films prepared by ultrasonic spray pyrolysis from solutions of an indium-zinc formate (IZF) precursor. Thin, crack-free, amorphous IZO films with good optical transmittance (>75%) and conductivities of ~34 S/cm were produced from an IZF-HNO₃-methanol ink using joint RTP and Ar-H₂ annealing.

Keywords

II-VI semiconductors; amorphous semiconductors; annealing; electrical conductivity; indium compounds; light transmission; liquid phase deposition; pyrolysis; semiconductor growth; semiconductor thin films; spray coating techniques; ultrasonic applications; wide band gap semiconductors; zinc compounds; InZnO; amorphous films; annealing; atmospheric-pressure solution deposition; conductivity; optical transmittance; transparent conducting oxide; ultrasonic spray pyrolysis; vacuum-based physical vapor deposition; Â¿-IZO films; Amorphous materials; Chemical vapor deposition; Conductive films; Costs; Manufacturing processes; Optical films; Photovoltaic systems; Solar power generation; Spraying; Vacuum technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE

Conference_Location

Philadelphia, PA

ISSN

0160-8371

Print_ISBN

978-1-4244-2949-3

Electronic_ISBN

0160-8371

Type

conf

DOI

10.1109/PVSC.2009.5411672

Filename

5411672