DocumentCode
344824
Title
Project of semiconductor high-power high-repetition rate compact accelerator
Author
Galstjan, E. ; Kazanskiy, L.
Author_Institution
MRTI, Moscow, Russia
Volume
3
fYear
1999
fDate
1999
Firstpage
1477
Abstract
The paper describes the project of a compact accelerator (120 kV, 2 kA, 15-25 ns pulse duration, 1 kHz repetition rate). To attract the attention of the accelerator community to the abilities of modern power fast semiconductors, this device is suggested by using modern high-power super-fast semiconductor switches
Keywords
particle accelerators; power semiconductor switches; 1 kHz; 120 kV; 15 to 25 ns; 2 kA; high-power superfast semiconductor switches; power fast semiconductor; semiconductor high-power high-repetition rate compact accelerator; Acceleration; Capacitors; Inductors; Jitter; Magnetic switching; Modems; Semiconductivity; Semiconductor devices; Switches; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Particle Accelerator Conference, 1999. Proceedings of the 1999
Conference_Location
New York, NY
Print_ISBN
0-7803-5573-3
Type
conf
DOI
10.1109/PAC.1999.794139
Filename
794139
Link To Document