DocumentCode
3448281
Title
VOC losses on CIS photovoltaic devices: Theoretical identification and quantification.
Author
Ruiz, C.M. ; Bermúdez, V.
Author_Institution
Inst. de Rech. et Dev. sur l´´Energie Photovoltaique (IRDEP), Chatou, France
fYear
2009
fDate
7-12 June 2009
Abstract
On this paper, we have studied the effect of the quality of different layers and their influence on the Voc of a standard CISEL¿ cell. The objective is to asset the magnitude of the global losses and to identify the responsibility of each layer on this final value. For this, we have carried several simulations with the SCAPS2.7.03 software. We propose a model for the standard cell, and then we substitute the optimal layers for another with known issues on the different materials. Then some experimental examples are compared with the model to validate it.
Keywords
II-VI semiconductors; cadmium compounds; copper compounds; indium compounds; losses; molybdenum compounds; semiconductor device models; solar cells; ternary semiconductors; wide band gap semiconductors; zinc compounds; CIS photovoltaic device; CISEL cell; MoS2-CuInS2-CuIn(SSe)2-CdS-ZnO; SCAPS2.7.03 software; VOC losses; global losses; material properties; open circuit voltage; photovoltaic cell model; solar cells; Charge carrier density; Computational Intelligence Society; Conductivity; Costs; Crystallization; Material properties; Photovoltaic systems; Solar power generation; Space charge; Standards development;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location
Philadelphia, PA
ISSN
0160-8371
Print_ISBN
978-1-4244-2949-3
Electronic_ISBN
0160-8371
Type
conf
DOI
10.1109/PVSC.2009.5411674
Filename
5411674
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