Title :
Deposition of CuInAlSe2 films using co-sputtered precursors and selenization
Author :
Dwyer, Daniel ; Repins, Ingrid ; Efstathiadis, Harry ; Haldar, Pradeep
Author_Institution :
Coll. of Nanoscale Sci. & Eng., SUNY - Univ. at Albany, Albany, NY, USA
Abstract :
CuInAl precursor films with varying Al/(Al+In) ratios were co-sputtered onto Mo coated soda-lime glass substrates. Samples were then selenized under high vacuum using thermally evaporated elemental selenium. Single-step and two-step selenization heating profiles were investigated. Single-step samples resulted in better Mo-CuInAlSe2 adhesion than those selenized using the two-step approach. Precursor and selenized films were characterized for composition, crystalline structure, surface morphology, and composition with depth. The development of a method to co-sputtered CuInAl precursors is discussed, as well as the effect of selenization temperature and heating profile on selenized film properties.
Keywords :
aluminium compounds; copper compounds; crystal structure; heat treatment; indium compounds; semiconductor growth; sputter deposition; surface morphology; ternary semiconductors; CuInAlSe2; Mo-Na2O-CaO-SiO2; Na2O-CaO-SiO2; co-sputtering; crystalline structure; films; heating; selenization; soda-lime glass substrates; surface morphology; Crystallization; Gallium; Glass; Heating; Indium; Lattices; Photonic band gap; Sputtering; Substrates; Temperature;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2009.5411687