Title :
Extremely broadband tunable semiconductor lasers for optical communication
Author :
Ching-Fuh Lin ; Yi-Shin Su ; Bing-Ruey Wu
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
Summary form only given. Sumary form only given. Broadband characteristics are important for optical communication. This work reports the study on the design of MQWs for broadband semiconductor lasers/amplifiers. The study shows that, with properly designed sequence of nonidentical MQWs made of InGaAsP/InP materials, the emission bandwidth could be nearly 300 nm. Using the designed MQWs as the laser gain material, the external-cavity semiconductor laser exhibits an extremely broadband tuning range, covering from 1300 nm to 1540 nm.
Keywords :
III-V semiconductors; broadband networks; gallium arsenide; indium compounds; laser cavity resonators; laser tuning; optical transmitters; quantum well lasers; 1300 to 1540 nm; InGaAsP-InP; InGaAsP/InP materials; broadband semiconductor laser amplifiers; broadband tunable semiconductor lasers; emission bandwidth; external-cavity semiconductor laser; extremely broadband tuning range; laser gain material; nonidentical MQWs; optical communication; Laser tuning; Optical design; Optical materials; Quantum well devices; Semiconductor lasers; Semiconductor materials; Semiconductor optical amplifiers; Stimulated emission; Tunable circuits and devices; Ultraviolet sources;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-662-1
DOI :
10.1109/CLEO.2001.947752
