Extremely broadband tunable semiconductor lasers for optical communication

Author

Ching-Fuh Lin ; Yi-Shin Su ; Bing-Ruey Wu

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2001

fDate

11-11 May 2001

Firstpage

237

Lastpage

238

Abstract

Summary form only given. Sumary form only given. Broadband characteristics are important for optical communication. This work reports the study on the design of MQWs for broadband semiconductor lasers/amplifiers. The study shows that, with properly designed sequence of nonidentical MQWs made of InGaAsP/InP materials, the emission bandwidth could be nearly 300 nm. Using the designed MQWs as the laser gain material, the external-cavity semiconductor laser exhibits an extremely broadband tuning range, covering from 1300 nm to 1540 nm.

Keywords

III-V semiconductors; broadband networks; gallium arsenide; indium compounds; laser cavity resonators; laser tuning; optical transmitters; quantum well lasers; 1300 to 1540 nm; InGaAsP-InP; InGaAsP/InP materials; broadband semiconductor laser amplifiers; broadband tunable semiconductor lasers; emission bandwidth; external-cavity semiconductor laser; extremely broadband tuning range; laser gain material; nonidentical MQWs; optical communication; Laser tuning; Optical design; Optical materials; Quantum well devices; Semiconductor lasers; Semiconductor materials; Semiconductor optical amplifiers; Stimulated emission; Tunable circuits and devices; Ultraviolet sources;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-662-1

Type

conf

DOI

10.1109/CLEO.2001.947752

Filename

947752