Wideband integrated multiple laser chip on 1.55 /spl mu/m heterostructure using controlled bandgap tuning by quantum well intermixing

Author

Aimez, V. ; Beauvais, J. ; Beerens, J. ; Lim, H.S. ; Ooi, B.S.

Author_Institution

Dept. of Electr. Eng., Sherbrooke Univ., Que., Canada

fYear

2001

fDate

11-11 May 2001

Firstpage

238

Abstract

Summary form only given. Quantum well intermixing (QWI) is a key technology for the fabrication of advanced photonic integrated components (PICs) requiring integration of multiple bandgap values over a 150 nm range on a single substrate. Standard MOCVD-grown, 1.55 /spl mu/m heterostructures with five quantum wells were used for this work.

Keywords

MOCVD; ion implantation; laser transitions; laser tuning; masks; optical fabrication; photolithography; quantum well lasers; 1.55 /spl mu/m heterostructure; 1.55 micron; MOCVD-grown; advanced photonic integrated components fabrication; controlled bandgap tuning; heterostructures; multiple bandgap values; quantum well intermixing; quantum wells; single substrate; wideband integrated multiple laser chip; Annealing; Ion implantation; Laser theory; Laser tuning; Optical control; Optical device fabrication; Photonic band gap; Physics; Quantum well lasers; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-662-1

Type

conf

DOI

10.1109/CLEO.2001.947753

Filename

947753