Title :
Monolithic fabrication of 2 /spl times/ 2 crosspoint switches in InGaAs/InAlGaAs multiple quantum wells using quantum well intermixing
Author :
Qiu, B.C. ; Liu, Minggang ; Ke, M.L. ; Lee, H.K. ; Bryce, A.C. ; Aitchison, J.S. ; Marsh, John H.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Abstract :
Summary form only given. Optical switching and packet routing are highly desirable functions in optical communication networks. The requirements of both a high switching speed and low insertion loss can be met using semiconductor devices. Here we report the monolithic integration of semiconductor optical amplifiers (SOAs), electro-absorption (EA) modulators, and passive power splitters and combiners to form 2 /spl times/ 2 crosspoint switches.
Keywords :
III-V semiconductors; electro-optical modulation; electro-optical switches; electroabsorption; gallium arsenide; indium compounds; integrated circuit technology; integrated optoelectronics; optical beam splitters; optical communication equipment; optical fabrication; optical losses; semiconductor quantum wells; 2 /spl times/ 2 crosspoint switches; InGaAs-InAlGaAs; InGaAs/InAlGaAs multiple quantum wells; electro-absorption modulators; high switching speed; low insertion loss; monolithic fabrication; monolithic integration; optical communication networks; optical switching; packet routing; passive power combiners; passive power splitters; quantum well intermixing; semiconductor devices; semiconductor optical amplifiers; Communication switching; Optical device fabrication; Optical fiber communication; Optical fiber networks; Optical modulation; Optical packet switching; Optical switches; Power semiconductor switches; Routing; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-662-1
DOI :
10.1109/CLEO.2001.947754
