Title :
Tuning piezoelectric fields in InGaN/GaN quantum wells
Author :
Vaschenko, G. ; Patel, Dinesh ; Menoni, C.S. ; Keller, S. ; Mishra, Umesh ; DenBaars, Steven P. ; Tome, C.N. ; Clausen, B.
Author_Institution :
Dept. of Electr. & Comput. Eng., Colorado State Univ., Fort Collins, CO, USA
Abstract :
Summary form only given. .We provide evidence of the effect that a continuously varying piezoelectric field has on the emission of InGaN/GaN quantum wells (QWs). To isolate the effect of the piezoelectric field we performed CW and time dependent photoluminescence (PL) measurements in InGaN/GaN QWs with different Si doping in the barrier as a function of hydrostatic pressure.
Keywords :
gallium compounds; indium compounds; optical testing; optical tuning; photoluminescence; piezoelectricity; semiconductor device testing; semiconductor doping; semiconductor quantum wells; CW measurements; InGaN-GaN; InGaN/GaN quantum wells; Si; Si doping; continuously varying piezoelectric field; hydrostatic pressure; piezoelectric field tuning; time dependent photoluminescence measurements; Carbon nanotubes; Extinction ratio; Gallium nitride; Nanowires; Photoconducting materials; Photonic band gap; Power amplifiers; Semiconductor nanotubes; Switches; USA Councils;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO '01. Technical Digest. Summaries of papers presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-662-1
DOI :
10.1109/CLEO.2001.947755
