Title :
Layer transfer of Cu(In,Ga)Se2 thin-film to alternative substrate and application to solar cells
Author :
Minemoto, T. ; Anegawa, T. ; Osada, S. ; Takakura, H.
Author_Institution :
Ritsumeikan Global Innovation Res. Organ., Ritsumeikan Univ., Kusatsu, Japan
Abstract :
To widen the variety of substrate choice of Cu(In, Ga)Se2 (CIGS) solar cells, a lift off process was developed without an intentional sacrifice layer between CIGS and Mo back contact layers. CIGS films grown on Mo/glass substrates were transferred to alternative substrates of glass and polyimide. Based on the transferred CIGS films, deices with ITO/ZnO/CdS/CIGS/Mo/epoxy/alternative-substrates structure were fabricated. Both solar cells showed almost half values of efficiencies compared to a CIGS solar cell fabricated with a standard process. Modifications on a back contact property and a composition profile of the CIGS layer will improve the device performance of the lift-off cells.
Keywords :
II-VI semiconductors; aluminium; cadmium compounds; copper compounds; gallium compounds; indium compounds; molybdenum; semiconductor thin films; solar cells; ternary semiconductors; thin film devices; tin compounds; wide band gap semiconductors; zinc compounds; CIGS; ITO-ZnO-CdS-CIGS-Mo; back contact layers; composition profile; intentional sacrifice layer; lift off process; solar cells; thin film; Current measurement; Glass; Indium tin oxide; Photovoltaic cells; Plastic films; Polyimides; Polymer films; Substrates; Transistors; Zinc oxide;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2009.5411694
