DocumentCode :
3448877
Title :
TCAD for bipolar process development: a user´s perspective
Author :
Voorde, Paul Vande
Author_Institution :
Hewlett Packard Corp., Palo Alto, CA, USA
fYear :
1991
fDate :
9-10 Sep 1991
Firstpage :
101
Lastpage :
109
Abstract :
The author reviews the use of public domain TCAD tools (SUPREM and PISCES) for advanced bipolar process development. The simulators are utilized for device design and optimization, sensitivity analysis, and AC and DC parameter extraction. The various bipolar parameters that can be obtained from simulation are discussed. PISCES has been enhanced to model Si1-xGex heterojunction bipolar device structures. Some preliminary simulations of SiGe structures are presented
Keywords :
CAD; Ge-Si alloys; bipolar integrated circuits; electronic engineering computing; heterojunction bipolar transistors; integrated circuit technology; semiconductor device models; semiconductor materials; sensitivity analysis; AC parameter extraction; DC parameter extraction; HBT modelling; PISCES; SUPREM; SiGe structures; bipolar process development; device design; heterojunction bipolar device; optimization; public domain TCAD tools; sensitivity analysis; Analytical models; Circuit optimization; Circuit simulation; Design optimization; Fabrication; Germanium silicon alloys; Heterojunctions; Process design; SPICE; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1991., Proceedings of the 1991
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-0103-X
Type :
conf
DOI :
10.1109/BIPOL.1991.160966
Filename :
160966
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3448877
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