Title :
Cosmic radiation as a cause for power device failure and possible countermeasures
Author :
Kabza, Herbert ; Schulze, H.-J. ; Gerstenmaier, Y. ; Voss, P. ; Pfirsch, F.
Author_Institution :
Corp. Res. & Dev., Siemens AG, Munich
fDate :
31 May-3 Jun 1994
Abstract :
DC stress tests on high power semiconductor devices at nominal device ratings yielded unexpected device failures. Without prior indication the devices were destroyed spontaneously anywhere in the bulk. The failure rate depends exponentially on the applied voltage. By transferring the test setup into a salt mine 130 m below ground we were able to prove that cosmic radiation is the cause for these failures. So far the only means to reduce the failure rate is to reduce the maximum field within the device by appropriate design
Keywords :
semiconductor device reliability; DC stress tests; applied voltage; cosmic radiation; countermeasures; failure rate; high power semiconductor devices; power device failure; salt mine; test setup; Anodes; Metallization; Performance evaluation; Power semiconductor devices; Radioactive decay; Radioactive materials; Silicon; Stress; Testing; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location :
Davos
Print_ISBN :
0-7803-1494-8
DOI :
10.1109/ISPSD.1994.583620