2.5 kV 100 A μ-stack IGBT

Author

Takahashi, Yoshikazu ; Koga, Takeharu ; Kirihata, Humiaki ; Seki, Yasukazu

Author_Institution

Adv. Device Technol. Lab., Fuji Electr. Corp. Res. & Dev. Ltd., Matsumoto, Japan

fYear

1994

fDate

31 May-3 Jun 1994

Firstpage

25

Lastpage

30

Abstract

A 2.5 kV 100 A μ(micro)-stack IGBT has been developed. This is the first work to demonstrate the possibility of a high voltage, high current and high reliable flat-packaged MOS controlled device. The 20 mm square chip is press-contacted with an emitter electrode having four rectangular p-base regions on which the MOS gate is not arranged. The great advantage of this structure is the double side cooling and the bondingless emitter wire. The μ-stack IGBT shows the high blocking voltage of 2.5 kV, the typical saturation voltage of 3.5 V at the collector current Ic=100 A, the turn-off capability of 3×Ic, and the good pressure contact for the electrical and thermal characteristics in the range from 100 to 800 kg/chip

Keywords

insulated gate bipolar transistors; 100 A; 2.5 kV; 3.5 V; blocking voltage; double side cooling; emitter electrode; flat-packaged MOS controlled device; high current; high reliability device; high voltage; microstack IGBT; saturation voltage; Bonding; Contacts; Current control; Electrodes; Inductance; Insulated gate bipolar transistors; Packaging; Surface impedance; Threshold voltage; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on

Conference_Location

Davos

ISSN

1063-6854

Print_ISBN

0-7803-1494-8

Type

conf

DOI

10.1109/ISPSD.1994.583631

Filename

583631