SiGe: a promise into reality?

Author

Grimmeiss, H.G. ; Olajos, J. ; Engvall, J.

Author_Institution

Dept. of Solid State Phys., Lund Univ., Sweden

fYear

1995

fDate

11-14 Oct 1995

Firstpage

17

Lastpage

26

Abstract

The paper summarizes a few basic properties of SiGe showing that SiGe is an interesting material for high speed electronics. The advantage of using heterostructures in silicon-based technologies is demonstrated by taking SiGe heterojunction bipolar transistors (HBTs) as an example. First results obtained with very fast and low-noise HBTs are briefly mentioned. The paper is concluded by a short discussion of a few optoelectronic properties observed in various Si/Ge and Si/Si_1-xGe_x strained-layer superlattices and quantum wells with particular emphasis on electroluminescence properties

Keywords

Ge-Si alloys; electroluminescence; heterojunction bipolar transistors; optoelectronic devices; photoluminescence; semiconductor device noise; semiconductor materials; semiconductor quantum wells; semiconductor superlattices; HBT; Si-SiGe; electroluminescence properties; heterojunction bipolar transistors; low-noise devices; optoelectronic properties; quantum wells; strained-layer superlattices; Circuits; Consumer electronics; Costs; Germanium silicon alloys; III-V semiconductor materials; Information technology; Microelectronics; Production; Semiconductor materials; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International

Conference_Location

Sinaia

Print_ISBN

0-7803-2647-4

Type

conf

DOI

10.1109/SMICND.1995.494858

Filename

494858