Title :
SiGe: a promise into reality?
Author :
Grimmeiss, H.G. ; Olajos, J. ; Engvall, J.
Author_Institution :
Dept. of Solid State Phys., Lund Univ., Sweden
Abstract :
The paper summarizes a few basic properties of SiGe showing that SiGe is an interesting material for high speed electronics. The advantage of using heterostructures in silicon-based technologies is demonstrated by taking SiGe heterojunction bipolar transistors (HBTs) as an example. First results obtained with very fast and low-noise HBTs are briefly mentioned. The paper is concluded by a short discussion of a few optoelectronic properties observed in various Si/Ge and Si/Si1-x Gex strained-layer superlattices and quantum wells with particular emphasis on electroluminescence properties
Keywords :
Ge-Si alloys; electroluminescence; heterojunction bipolar transistors; optoelectronic devices; photoluminescence; semiconductor device noise; semiconductor materials; semiconductor quantum wells; semiconductor superlattices; HBT; Si-SiGe; electroluminescence properties; heterojunction bipolar transistors; low-noise devices; optoelectronic properties; quantum wells; strained-layer superlattices; Circuits; Consumer electronics; Costs; Germanium silicon alloys; III-V semiconductor materials; Information technology; Microelectronics; Production; Semiconductor materials; Silicon germanium;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.494858
