Title :
A steady-state analytical model for the trench insulated gate bipolar transistor
Author :
Udrea, F. ; Amaratunga, G.A.J.
Author_Institution :
Dept. of Eng., Cambridge Univ.
Abstract :
A steady-state, physically-based analytical model for the trench Insulated Gate Bipolar Transistor (IGBT) which accounts for a combined PIN diode-PNP transistor carrier dynamics is proposed. Previous models (i.e. PIN model and PNP transistor model) cannot account properly for the carrier dynamics in trench IGBT since neither the PNP transistor nor the PIN diode effect can be neglected. An optimised trench IGBT with a large ratio between the accumulation layer and the cell size leads to substantially improved on-state characteristics, which makes the trench IGBT potentially the most attractive device in the area of high voltage fast switching devices
Keywords :
carrier density; insulated gate bipolar transistors; power semiconductor switches; semiconductor device models; HV fast switching devices; PIN diode; PNP transistor; accumulation layer; carrier dynamics; insulated gate bipolar transistor; on-state characteristics; steady-state analytical model; trench IGBT; Analytical models; Anodes; Boundary conditions; Capacitance; Current density; Insulated gate bipolar transistors; Insulation; Steady-state; Threshold voltage; Voltage control;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.494861
