A high performance intelligent IGBT with overcurrent protection

Author

Shimizu, Y. ; Nakano, Y. ; Kono, Y. ; Sakurai, N. ; Sugawara, Y. ; Otaka, S.

Author_Institution

Res. Lab., Hitachi Ltd., Ibaraki, Japan

fYear

1994

fDate

31 May-3 Jun 1994

Firstpage

37

Lastpage

41

Abstract

We have proposed a 600 V, 30 A IGBT, having a novel overcurrent protection circuit, on one chip. The protection circuit was fabricated on a silicon wafer coated with a polycrystalline silicon film. A Zener diode was used in the gate suppress circuit to keep the gate voltage at the controlled value. An overcurrent limitation function was successfully obtained with no oscillation. The fabricated device has an on-state voltage of 1.50 V at 100 A/cm². The turn-off fall time is 0.28 μs. This trade-off value is almost at the limit of this class of planer-gate IGBT

Keywords

overcurrent protection; 0.28 mus; 1.5 V; 30 A; 600 V; Si; Si wafer substrate; Zener diode; gate suppress circuit; intelligent IGBT; overcurrent limitation function; overcurrent protection; planer-gate IGBT; polycrystalline Si film; Delay effects; Insulated gate bipolar transistors; Laboratories; MOSFET circuits; Protection; Semiconductor diodes; Semiconductor films; Silicon; Switching loss; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on

Conference_Location

Davos

ISSN

1063-6854

Print_ISBN

0-7803-1494-8

Type

conf

DOI

10.1109/ISPSD.1994.583640

Filename

583640