Title :
A high performance intelligent IGBT with overcurrent protection
Author :
Shimizu, Y. ; Nakano, Y. ; Kono, Y. ; Sakurai, N. ; Sugawara, Y. ; Otaka, S.
Author_Institution :
Res. Lab., Hitachi Ltd., Ibaraki, Japan
fDate :
31 May-3 Jun 1994
Abstract :
We have proposed a 600 V, 30 A IGBT, having a novel overcurrent protection circuit, on one chip. The protection circuit was fabricated on a silicon wafer coated with a polycrystalline silicon film. A Zener diode was used in the gate suppress circuit to keep the gate voltage at the controlled value. An overcurrent limitation function was successfully obtained with no oscillation. The fabricated device has an on-state voltage of 1.50 V at 100 A/cm2. The turn-off fall time is 0.28 μs. This trade-off value is almost at the limit of this class of planer-gate IGBT
Keywords :
overcurrent protection; 0.28 mus; 1.5 V; 30 A; 600 V; Si; Si wafer substrate; Zener diode; gate suppress circuit; intelligent IGBT; overcurrent limitation function; overcurrent protection; planer-gate IGBT; polycrystalline Si film; Delay effects; Insulated gate bipolar transistors; Laboratories; MOSFET circuits; Protection; Semiconductor diodes; Semiconductor films; Silicon; Switching loss; Voltage control;
Conference_Titel :
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location :
Davos
Print_ISBN :
0-7803-1494-8
DOI :
10.1109/ISPSD.1994.583640
