DocumentCode
3449281
Title
Pumping Single Electrons Through a Laterally Defined Quantum Dot using Surface Acoustic Waves
Author
Fletcher, N.E. ; Ebbecke, J. ; Janssen, T.J.B.M. ; Ahlers, F.J.
Author_Institution
National Phys. Lab., Teddington
fYear
2004
fDate
38139
Firstpage
544
Lastpage
545
Abstract
We present a new realization of quantized charge pumping operating at 3 GHz. Surface acoustic waves on a GaAs/AlGaAs heterostructure are used to pump electrons through a quantum dot defined by metallic split gates. The current quantization is determined by the electronic states of the dot
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor quantum dots; single electron devices; surface acoustic waves; tunnelling; 3 GHz; GaAs-AlGaAs; metallic split gates; pump electrons; quantized charge pumping; quantum dot; single electrons; surface acoustic waves; Acoustic waves; Electrons; Gallium arsenide; Quantization; Quantum capacitance; Quantum dots; Surface acoustic waves; Transducers; US Department of Transportation; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Precision Electromagnetic Measurements Digest, 2004 Conference on
Conference_Location
London
Print_ISBN
0-7803-8494-6
Electronic_ISBN
0-7803-8494-6
Type
conf
DOI
10.1109/CPEM.2004.305353
Filename
4097364
Link To Document