Title :
A study on the IGBT´s turn-off failure and inhomogeneous operation
Author :
Yamashita, J. ; Haruguchi, H. ; Hagino, H.
Author_Institution :
Fukuoka Works, Mitsubishi Electr. Corp., Fukuoka, Japan
fDate :
31 May-3 Jun 1994
Abstract :
An IGBT fails to turn-off in a smaller operating area compared to a steady state one. In this paper, the authors show that inhomogeneous operation reduces the turn-off SOA of an IGBT, with newly developed experiments and simulations
Keywords :
power transistors; IGBT; inhomogeneous operation; safe operating area; turnoff SOA; turnoff failure; Automatic testing; Circuit testing; Insulated gate bipolar transistors; Roentgenium; Semiconductor optical amplifiers; Snubbers; Space vector pulse width modulation; Surges; Tail; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location :
Davos
Print_ISBN :
0-7803-1494-8
DOI :
10.1109/ISPSD.1994.583642
