DocumentCode
3449300
Title
A study on the IGBT´s turn-off failure and inhomogeneous operation
Author
Yamashita, J. ; Haruguchi, H. ; Hagino, H.
Author_Institution
Fukuoka Works, Mitsubishi Electr. Corp., Fukuoka, Japan
fYear
1994
fDate
31 May-3 Jun 1994
Firstpage
45
Lastpage
50
Abstract
An IGBT fails to turn-off in a smaller operating area compared to a steady state one. In this paper, the authors show that inhomogeneous operation reduces the turn-off SOA of an IGBT, with newly developed experiments and simulations
Keywords
power transistors; IGBT; inhomogeneous operation; safe operating area; turnoff SOA; turnoff failure; Automatic testing; Circuit testing; Insulated gate bipolar transistors; Roentgenium; Semiconductor optical amplifiers; Snubbers; Space vector pulse width modulation; Surges; Tail; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location
Davos
ISSN
1063-6854
Print_ISBN
0-7803-1494-8
Type
conf
DOI
10.1109/ISPSD.1994.583642
Filename
583642
Link To Document