• DocumentCode
    3449309
  • Title

    A Simple Method for Fabricating Silicon Single Electron Devices for Metrology Applications

  • Author

    Hwang, G.J. ; Huang, C.F. ; Fang, Y.P. ; Chou, Y.C. ; Hu, S.F.

  • Author_Institution
    Center for Meas. Stand., Ind. Technol. Res. Inst., Hsinchu
  • fYear
    2004
  • fDate
    38139
  • Firstpage
    548
  • Lastpage
    549
  • Abstract
    A simple method, based on overlapping the dosage distribution of the discretely electron beam written nano-dots, was employed to fabricate silicon single electron transistor. The electronic characteristics of fabricated Si-based SET were analyzed, and found to be consistent with the expected behavior of electron transport through a gated quantum dot
  • Keywords
    semiconductor quantum dots; single electron transistors; electron beam; electron transport; metrology applications; quantum dot; silicon single electron devices; silicon single electron transistor; Capacitance; Electron beams; Laboratories; Metrology; Quantum dots; Semiconductor films; Silicon; Single electron devices; Single electron transistors; Standards development;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Precision Electromagnetic Measurements Digest, 2004 Conference on
  • Conference_Location
    London
  • Print_ISBN
    0-7803-8494-6
  • Electronic_ISBN
    0-7803-8494-6
  • Type

    conf

  • DOI
    10.1109/CPEM.2004.305355
  • Filename
    4097366
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3449309