Title :
A reverse-channel, high-voltage lateral IGBT
Author :
Chow, T. Paul ; Pattanayak, Deva N. ; Baliga, B.Jayant ; Adler, Michael S.
Author_Institution :
Rensselaer Polytech. Inst., Troy, NY, USA
fDate :
31 May-3 Jun 1994
Abstract :
A novel reverse-channel lateral IGBT has been studied with numerical simulations and demonstrated experimentally for the first time. It exhibits a negative differential resistance (NDR) region, which is dependent on the gate voltage and has large peak to valley ratios (10 to >1000), in the I-V characteristics. Also, during dynamic switching, it has been shown to be self-current limiting and hence not to latch up
Keywords :
insulated gate bipolar transistors; HV lateral IGBT; I-V characteristics; NDR region; dynamic switching; gate voltage; high-voltage IGBT; negative differential resistance; reverse-channel device; self-current limiting; Conductivity; Electric resistance; FETs; Insulated gate bipolar transistors; Insulation; Latches; Numerical simulation; Region 2; Research and development; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location :
Davos
Print_ISBN :
0-7803-1494-8
DOI :
10.1109/ISPSD.1994.583647
