Title :
The fast turn off advanced IGBT, a new device concept
Author :
Yee, H.P. ; Lauritzen, P.O. ; Darling, Robert B. ; Wakatabe, M. ; Sugai, A. ; Horiguchi, K.
Author_Institution :
Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
fDate :
31 May-3 Jun 1994
Abstract :
A new lateral Advanced IGBT (A-IGBT) that includes an additional P-MOSFET for faster turn-off is presented. The added P-MOSFET removes injected minority carriers in the base of A-IGBT during turn-off, achieving faster turn-off times without increasing IGBT on-state voltages. Device simulations indicate an A-IGBT has a factor of 10 improvement in turn-off time over the standard IGBT
Keywords :
insulated gate bipolar transistors; P-MOSFET; device simulations; fast turnoff; injected minority carriers removal; lateral IGBT; Anodes; Bipolar transistors; Breakdown voltage; Cathodes; Impedance; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET; Power integrated circuits; Silicon;
Conference_Titel :
Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on
Conference_Location :
Davos
Print_ISBN :
0-7803-1494-8
DOI :
10.1109/ISPSD.1994.583648
