1EV GANxAS1-x-ySBy material for lattice-matched III–V solar cell implementation on GaAs and Ge

Author

Ng, Tien Khee ; Yoon, Soon Fatt ; Tan, Kian Hua ; Loke, Wan Khai ; Wicaksono, Satrio ; Lew, Kim Luong ; Chen, Kah Pin ; Fitzgerald, Eugene A. ; Pitera, Arthur J. ; Ringel, Steve A. ; Carlin, Andrew M. ; Gonzalez, Maria

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore

fYear

2009

fDate

7-12 June 2009

Abstract

The effect of different arsenic species (As₂ or As₄) on the quality of molecular beam epitaxy (MBE) grown GaNAsSb materials (samples A and B) and GaAs/ GaNAsSb/GaAs p⁺n^-n⁺ devices (samples C and D) were investigated. The improvement in material quality in sample B, as well as the improvement in diode and solar cell characteristics in sample C, may suggest a successful defect density manipulation using As₂ overpressure for GaNAsSb growth.

Keywords

III-V semiconductors; arsenic compounds; gallium arsenide; gallium compounds; molecular beam epitaxial growth; semiconductor diodes; solar cells; GaAs-GaNAsSb-GaAs; arsenic species; defect density manipulation; lattice-matched III-V solar cell; material quality; molecular beam epitaxial growth; p⁺n^-n⁺ devices; semiconductor diode; Charge carrier lifetime; Energy conversion; Gallium arsenide; Gallium nitride; III-V semiconductor materials; Laser tuning; Materials science and technology; Molecular beam epitaxial growth; Photovoltaic cells; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE

Conference_Location

Philadelphia, PA

ISSN

0160-8371

Print_ISBN

978-1-4244-2949-3

Electronic_ISBN

0160-8371

Type

conf

DOI

10.1109/PVSC.2009.5411736

Filename

5411736