Title :
1EV GANxAS1-x-ySBy material for lattice-matched III–V solar cell implementation on GaAs and Ge
Author :
Ng, Tien Khee ; Yoon, Soon Fatt ; Tan, Kian Hua ; Loke, Wan Khai ; Wicaksono, Satrio ; Lew, Kim Luong ; Chen, Kah Pin ; Fitzgerald, Eugene A. ; Pitera, Arthur J. ; Ringel, Steve A. ; Carlin, Andrew M. ; Gonzalez, Maria
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
The effect of different arsenic species (As2 or As4) on the quality of molecular beam epitaxy (MBE) grown GaNAsSb materials (samples A and B) and GaAs/ GaNAsSb/GaAs p+n-n+ devices (samples C and D) were investigated. The improvement in material quality in sample B, as well as the improvement in diode and solar cell characteristics in sample C, may suggest a successful defect density manipulation using As2 overpressure for GaNAsSb growth.
Keywords :
III-V semiconductors; arsenic compounds; gallium arsenide; gallium compounds; molecular beam epitaxial growth; semiconductor diodes; solar cells; GaAs-GaNAsSb-GaAs; arsenic species; defect density manipulation; lattice-matched III-V solar cell; material quality; molecular beam epitaxial growth; p+n-n+ devices; semiconductor diode; Charge carrier lifetime; Energy conversion; Gallium arsenide; Gallium nitride; III-V semiconductor materials; Laser tuning; Materials science and technology; Molecular beam epitaxial growth; Photovoltaic cells; Substrates;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
DOI :
10.1109/PVSC.2009.5411736
