DocumentCode :
3449415
Title :
Refractive index dispersion of a-Si1-xCx:H
Author :
Tomozeiu, N. ; Tomozeiu, Mariana
Author_Institution :
Fac. of Phys., Bucharest Univ., Romania
fYear :
1995
fDate :
11-14 Oct 1995
Firstpage :
91
Lastpage :
94
Abstract :
The refractive-index behavior (magnitude and dispersion) of a-Si 1-xCx:H undoped is presented. Using the single-effective-oscillator model, the dispersion energy Ed which is a measure of the strength of interband optical transitions, is found. Experimentally, is also pointed out the influence of the carbon content on the model parameters
Keywords :
amorphous semiconductors; hydrogen; refractive index; silicon compounds; stoichiometry; voids (solid); C content; SiC:H; a-Si1-xCx:H; interband optical transitions; refractive index dispersion; single-effective-oscillator model; voids; Amorphous materials; Argon; Dispersion; Frequency; Optical films; Optical refraction; Optical variables control; Oscillators; Polymer films; Refractive index;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
Type :
conf
DOI :
10.1109/SMICND.1995.494871
Filename :
494871
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3449415
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