Title :
Far-infrared spectroscopy of phonons in long-period GaAs/GaPx As1-x superlattices
Author :
Dmitruk, N.L. ; Goncharenko, A.V. ; Gorea, O.S. ; Romaniuk, V.R. ; Tatarinskaya, O.M. ; Venger, E.F.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
Abstract :
Reflectance and ATR spectra of long-period superlattices GaAs/GaP xAs1-x have been investigated experimentally and theoretically. Using the anisotropic (uniaxial) crystal model one can determine the superlattice parameters and identify the origin of the observed phonon modes
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; infrared spectra; interface phonons; phonons; reflectivity; semiconductor superlattices; ATR spectra; GaAs-GaPAs; anisotropic crystal model; far-infrared spectroscopy; long-period GaAs/GaPxAs1-x superlattices; phonon modes; phonons; reflectance spectra; uniaxial crystal model; Anisotropic magnetoresistance; Frequency; Gallium arsenide; Geometrical optics; Optical attenuators; Optical reflection; Optical surface waves; Phonons; Semiconductor superlattices; Spectroscopy;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.494872
