Title :
Raman scattering study of Zn+/P+ co-implanted GaAs single crystals
Author :
Ursaki, V.V. ; Ichizli, V.M. ; Tiginyanu, I.M. ; Terletskii, A.I. ; Caluja, Yu.I. ; Radautsan, S.I.
Author_Institution :
Inst. of Appl. Phys., Acad. of Sci., Kishinev, Moldova
Abstract :
The activation efficiency of zinc impurity co-implanted with P+ ions in GaAs single crystals was studied by Raman scattering (RS) at phonon-plasmon coupled modes. P+ co-implantation has been found to result in impurity activation improvement, the optimum electrical parameters of implanted layers being achieved after sample annealing at 700°C
Keywords :
III-V semiconductors; Raman spectra; annealing; gallium arsenide; ion implantation; phonon-plasmon interactions; phonons; phosphorus; zinc; 700 C; GaAs:Zn,P; Raman scattering; activation efficiency; annealing; co-implantation; electrical parameters; phonon-plasmon coupled modes; Annealing; Crystals; Damping; Frequency; Gallium arsenide; Light scattering; Performance analysis; Plasmons; Raman scattering; Zinc;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.494873
