DocumentCode :
3449459
Title :
Transport properties of Zn doped CuInSe2 single crystals
Author :
Tezlevan, V. ; Radautsan, S.
fYear :
1995
fDate :
11-14 Oct 1995
Firstpage :
107
Lastpage :
110
Abstract :
The results of the transport phenomena measurements on n-CuInSe 2 are presented. For the first time the transverse Nernst-Ettingshausen (N-E) effect is investigated in the I-III-VI2 materials. From the results of thermoelectric power, the Hall coefficient and transverse N-E effect measurements values of the density of states effective mass m* at the temperature range investigated have been calculated
Keywords :
Hall effect; copper compounds; effective mass; electronic density of states; impurity states; indium compounds; ternary semiconductors; thermoelectric power; thermomagnetic effects; zinc; CuInSe2:Zn; Hall coefficient; acceptors; density of states; donors; effective mass; n-CuInSe2:Zn; photovoltaic devices; thermoelectric power; transverse Nernst-Ettingshausen effect; Conducting materials; Crystals; Hall effect; Magnetic field measurement; Optical materials; Semiconductor materials; Temperature dependence; Temperature distribution; Thermoelectricity; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
Type :
conf
DOI :
10.1109/SMICND.1995.494875
Filename :
494875
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3449459
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