Comparative study of integrated current sensors in n-channel IGBTs

Author

Shen, Z. ; So, K.C. ; Chow, T.P.

Author_Institution

Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA

fYear

1994

fDate

31 May-3 Jun 1994

Firstpage

75

Lastpage

80

Abstract

Three types of integrated current sensors, which are referred to as active, bipolar, and MOS sensors, are studied for 600 V n-channel IGBTs. The MOS current sensor for vertical IGBTs is experimentally demonstrated for the first time. A comparative study of current sensing characteristics such as linearity, thermal stability, and dynamic response for the three device structures is conducted based on the modeling and experimental results. The basic device physics is discussed and some guidelines are provided for the design of IGBT integrated current sensors

Keywords

insulated gate bipolar transistors; 600 V; MOS sensors; active sensors; bipolar sensors; dynamic response; integrated current sensors; linearity; modeling; n-channel IGBTs; thermal stability; vertical IGBTs; Charge carrier processes; Guidelines; Insulated gate bipolar transistors; Linearity; MOSFETs; Physics; Sensor phenomena and characterization; Temperature distribution; Temperature sensors; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1994. ISPSD '94., Proceedings of the 6th International Symposium on

Conference_Location

Davos

ISSN

1063-6854

Print_ISBN

0-7803-1494-8

Type

conf

DOI

10.1109/ISPSD.1994.583654

Filename

583654