DocumentCode :
3449514
Title :
Epitaxial relations in BaF2 films grown by MBE on Si(111) substrates
Author :
Belenchuk, A. ; Fedorov, A. ; Zenchenko, V. ; Lukash, V. ; Vasilyev, A.
Author_Institution :
Inst. of Appl. Phys., Acad. of Sci., Kishinev, Moldova
fYear :
1995
fDate :
11-14 Oct 1995
Firstpage :
117
Lastpage :
120
Abstract :
The dependence of the epitaxial orientations of the films in BaF 2/Si(111) heterostructures on growth conditions and the influence of heat treatment on the stability of epitaxial relations in such structures are investigated. The correlations between the types of epitaxial relations and structures of interface are also discussed
Keywords :
barium compounds; elemental semiconductors; epitaxial layers; heat treatment; interface structure; molecular beam epitaxial growth; semiconductor materials; semiconductor-insulator boundaries; silicon; BaF2-Si; MBE; Si; Si(111) substrates; epitaxial orientations; growth conditions; heat treatment; heterostructures; interface structure; semiconductor; Annealing; Conductive films; Electrons; Elementary particle vacuum; Molecular beam epitaxial growth; Semiconductor films; Spectroscopy; Substrates; Temperature; Vacuum systems;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
Type :
conf
DOI :
10.1109/SMICND.1995.494877
Filename :
494877
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3449514
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