DocumentCode :
3449532
Title :
Development of silicon solar cells for six-junction tandem stack cells
Author :
Zin, Ngwe Soe ; Blakers, Andrew ; Everett, Vernie
Author_Institution :
Australian Nat. Univ., Canberra, ACT, Australia
fYear :
2009
fDate :
7-12 June 2009
Abstract :
This paper presents the development of small (2.5×8.0 mm2) silicon solar cells, to be used in a six-junction tandem device. PC1D, numerical modeling and quasi steady state photoconductance (QSSPC) measurement were used to predict the targeted efficiency of silicon solar cells. Early batch of cells had problems of shunting, series resistance and high carrier recombination. Various techniques - junction isolation, pin-hole analysis, diffusion drive-in, light-induced plating, lifetime degradation studies and implied-Voc - were used to improve the performance of the solar cells.
Keywords :
diffusion; elemental semiconductors; isolation technology; photoconductive cells; semiconductor device metallisation; silicon; solar cells; Si; carrier recombination; drive-in diffusion; junction isolation; lifetime degradation; light-induced plating; numerical modeling; pin-hole analysis; quasisteady state photoconductance measurement; series resistance; shunting; silicon solar cells; six-junction tandem stack cells; Boron; Fabrication; Lighting; Metallization; Photovoltaic cells; Predictive models; Radiative recombination; Silicon; Surface resistance; Surface texture;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location :
Philadelphia, PA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-2949-3
Electronic_ISBN :
0160-8371
Type :
conf
DOI :
10.1109/PVSC.2009.5411754
Filename :
5411754
Link To Document :
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