Title :
The effect of radiation-induced reversible switching annealing
Author :
Pershenkov, V.S. ; Belyakov, V.V. ; Cherepko, S.V. ; Sogoyan, A.V. ; Rusanovschi, V.I. ; Sontea, V.P.
Author_Institution :
Moscow Eng. Phys. Inst., Russia
Abstract :
The kinetics of rechargeable radiation induced trap buildup is investigated in the thin gate oxide of an MOS structure. Experimental evidence is provided to show that the switching reversible annealing following irradiation is caused by filling and detrapping of the oxide shallow electron traps
Keywords :
MIS structures; MOSFET; annealing; electron traps; radiation effects; radiation hardening (electronics); semiconductor device models; semiconductor-insulator boundaries; switching; MOS structure; Si-SiO2; kinetics; oxide shallow electron traps; radiation-induced reversible switching annealing; rechargeable radiation induced trap buildup; thin gate oxide; Annealing; Bonding; Electron traps; Filling; Hardware design languages; Kinetic theory; Length measurement; Physics; Threshold voltage; Voltage measurement;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.494880
