DocumentCode :
3449636
Title :
An ESCA study on ion beam induced oxidation of GaAs
Author :
Osiceanu, P. ; Alay, J.L.
Author_Institution :
Inst. of Phys. Chem., Bucharest, Romania
fYear :
1995
fDate :
11-14 Oct 1995
Firstpage :
141
Lastpage :
144
Abstract :
An ESCA study of the ion beam induced oxidation of GaAs samples under O2+ bombardment is reported. The surface stoichiometry of the built-up oxides during oxygen bombardment have been determined. Low levels of As oxidation as compared to Ga oxidation under oxygen bombardment was found
Keywords :
III-V semiconductors; X-ray photoelectron spectra; gallium arsenide; ion beam effects; oxidation; spectrochemical analysis; stoichiometry; surface structure; As oxidation; ESCA; Ga oxidation; GaAs; GaAs samples; O2; O2+ bombardment; XPS; built-up oxides; ion beam induced oxidation; surface stoichiometry; Attenuation; Bonding; Chemical analysis; Chemistry; Electrons; Gallium arsenide; Ion beams; Microelectronics; Oxidation; Steady-state;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
Type :
conf
DOI :
10.1109/SMICND.1995.494883
Filename :
494883
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3449636
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