• DocumentCode
    3449636
  • Title

    An ESCA study on ion beam induced oxidation of GaAs

  • Author

    Osiceanu, P. ; Alay, J.L.

  • Author_Institution
    Inst. of Phys. Chem., Bucharest, Romania
  • fYear
    1995
  • fDate
    11-14 Oct 1995
  • Firstpage
    141
  • Lastpage
    144
  • Abstract
    An ESCA study of the ion beam induced oxidation of GaAs samples under O2+ bombardment is reported. The surface stoichiometry of the built-up oxides during oxygen bombardment have been determined. Low levels of As oxidation as compared to Ga oxidation under oxygen bombardment was found
  • Keywords
    III-V semiconductors; X-ray photoelectron spectra; gallium arsenide; ion beam effects; oxidation; spectrochemical analysis; stoichiometry; surface structure; As oxidation; ESCA; Ga oxidation; GaAs; GaAs samples; O2; O2+ bombardment; XPS; built-up oxides; ion beam induced oxidation; surface stoichiometry; Attenuation; Bonding; Chemical analysis; Chemistry; Electrons; Gallium arsenide; Ion beams; Microelectronics; Oxidation; Steady-state;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-2647-4
  • Type

    conf

  • DOI
    10.1109/SMICND.1995.494883
  • Filename
    494883
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3449636