DocumentCode
3449664
Title
Passivation of monoatomic and compound semiconductors by GeOx Ny film
Author
Jishiashvili, D. ; Kutelia, E. ; Dzhanelidze, R. ; Shiolashvili, Z. ; Gobronidze, A.
Author_Institution
Inst. of Cybern., Acad. of Sci., Tbilisi, Georgia
fYear
1995
fDate
11-14 Oct 1995
Firstpage
145
Lastpage
148
Abstract
C-V characteristics of Al/GeOxNy/GaAs(Ge) metal-insulator-semiconductor (MIS) structures have been measured in the frequency range of 1 kHz-1 MHz. The density of the interface states was found to be as low as (5-8)×1010 cm-2 eV-1. There is no evidence of Fermi level pinning, and surface carrier inversion is clearly demonstrated. The pyrolytic GeOxNy film is recommended for high quality GaAs and Ge MIS device fabrication
Keywords
III-V semiconductors; MIS structures; aluminium; electronic density of states; elemental semiconductors; gallium arsenide; germanium; germanium compounds; interface states; inversion layers; passivation; semiconductor materials; semiconductor-insulator boundaries; 1 kHz to 1 MHz; Al-GeON-GaAs; Al-GeON-Ge; C-V characteristics; GaAs; Ge; MIS device fabrication; MIS structures; interface states; passivation; pyrolytic GeOxNy film; semiconductors; surface carrier inversion; Amorphous materials; Artificial intelligence; Capacitance-voltage characteristics; Frequency measurement; Gallium arsenide; Interface states; Passivation; Propellants; Semiconductor films; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location
Sinaia
Print_ISBN
0-7803-2647-4
Type
conf
DOI
10.1109/SMICND.1995.494884
Filename
494884
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