DocumentCode :
3449670
Title :
The photoluminescence in electrochemically oxidized porous silicon
Author :
Popescu, Mihai ; Chumash, Valentin ; Cojocaru, Ion ; Zamfira, Sorin ; Jain, V.K. ; Gupta, Amta
Author_Institution :
Inst. of Phys. & Technol. of Mater., Bucharest, Romania
fYear :
1995
fDate :
11-14 Oct 1995
Firstpage :
151
Lastpage :
154
Abstract :
Some oxidized porous silicon samples exhibit an amorphous phase with the approximate composition SiO1.6. The particular features of the photoluminescence spectra were tentatively ascribed to the contribution of the interface between silicon and the non-stoichiometric oxide
Keywords :
elemental semiconductors; oxidation; photoluminescence; porous materials; semiconductor materials; semiconductor technology; silicon; Si; Si-SiO; SiO1.6; amorphous phase; electrochemical oxidation; nonstoichiometric oxide; photoluminescence; porous silicon; semiconductor; Amorphous materials; Microstructure; Optical films; Oxidation; Photoluminescence; Physics; Silicon; Stimulated emission; Temperature measurement; X-ray diffraction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
Type :
conf
DOI :
10.1109/SMICND.1995.494885
Filename :
494885
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3449670
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