Title :
Extraction of the slow oxide trap density in MOS transistors using the charge pumping method
Author :
Maneglia, Y. ; Bauza, D. ; Ouisse, T.
Author_Institution :
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
Abstract :
It is shown that the charge pumping technique allows the study of the slow traps in the oxide of MOS transistors. The results on virgin devices are in agreement with those obtained on state-of-the-art MOS transistors. On virgin and stressed devices, they are in agreement with those obtained from drain current transient measurements
Keywords :
MOSFET; dielectric thin films; electron traps; hole traps; semiconductor device models; MOS transistors; charge pumping method; drain current transient measurements; model; slow oxide trap density; slow traps; Charge carrier processes; Charge pumps; Current measurement; Electric variables measurement; Electron traps; Energy capture; Filling; MOSFETs; Semiconductor device reliability; Stress measurement;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.494886
