Extraction of the slow oxide trap density in MOS transistors using the charge pumping method

Author

Maneglia, Y. ; Bauza, D. ; Ouisse, T.

Author_Institution

Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France

fYear

1995

fDate

11-14 Oct 1995

Firstpage

155

Lastpage

158

Abstract

It is shown that the charge pumping technique allows the study of the slow traps in the oxide of MOS transistors. The results on virgin devices are in agreement with those obtained on state-of-the-art MOS transistors. On virgin and stressed devices, they are in agreement with those obtained from drain current transient measurements

Keywords

MOSFET; dielectric thin films; electron traps; hole traps; semiconductor device models; MOS transistors; charge pumping method; drain current transient measurements; model; slow oxide trap density; slow traps; Charge carrier processes; Charge pumps; Current measurement; Electric variables measurement; Electron traps; Energy capture; Filling; MOSFETs; Semiconductor device reliability; Stress measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International

Conference_Location

Sinaia

Print_ISBN

0-7803-2647-4

Type

conf

DOI

10.1109/SMICND.1995.494886

Filename

494886

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3449679