DocumentCode :
3449700
Title :
An ESCA study on ion beam induced oxidation of Si
Author :
Osiceanu, P. ; Alay, J.L. ; De Coster, W.
Author_Institution :
Inst. of Phys. Chem., Bucharest, Romania
fYear :
1995
fDate :
11-14 Oct 1995
Firstpage :
159
Lastpage :
162
Abstract :
An ESCA investigation of the ion beam induced oxidation of Si samples under O2+ bombardment at different angles of incidence is reported. The surface stoichiometry of the built-up oxides and suboxides during oxygen bombardment was determined. The angular dependence was found more pronounced than the dependence on beam energy
Keywords :
elemental semiconductors; ion beam applications; oxidation; semiconductor materials; semiconductor technology; silicon; spectrochemical analysis; surface structure; ESCA; O2+ bombardment; Si; SiO; angular dependence; beam energy; ion beam induced oxidation; semiconductor; surface stoichiometry; Chemicals; Chemistry; Impurities; Ion beams; Ionization; Microelectronics; Oxidation; Pressure measurement; Surface cleaning; Surface finishing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
Type :
conf
DOI :
10.1109/SMICND.1995.494887
Filename :
494887
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3449700
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