• DocumentCode
    3449700
  • Title

    An ESCA study on ion beam induced oxidation of Si

  • Author

    Osiceanu, P. ; Alay, J.L. ; De Coster, W.

  • Author_Institution
    Inst. of Phys. Chem., Bucharest, Romania
  • fYear
    1995
  • fDate
    11-14 Oct 1995
  • Firstpage
    159
  • Lastpage
    162
  • Abstract
    An ESCA investigation of the ion beam induced oxidation of Si samples under O2+ bombardment at different angles of incidence is reported. The surface stoichiometry of the built-up oxides and suboxides during oxygen bombardment was determined. The angular dependence was found more pronounced than the dependence on beam energy
  • Keywords
    elemental semiconductors; ion beam applications; oxidation; semiconductor materials; semiconductor technology; silicon; spectrochemical analysis; surface structure; ESCA; O2+ bombardment; Si; SiO; angular dependence; beam energy; ion beam induced oxidation; semiconductor; surface stoichiometry; Chemicals; Chemistry; Impurities; Ion beams; Ionization; Microelectronics; Oxidation; Pressure measurement; Surface cleaning; Surface finishing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-2647-4
  • Type

    conf

  • DOI
    10.1109/SMICND.1995.494887
  • Filename
    494887
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3449700