Title :
Transmission electron microscopy and spectroellipsometric investigation of LPCVD polysilicon as-deposited and after hydrogenation
Author :
Flueraru, C. ; Vrinceanu, C. ; Rotaru, C. ; Stoica, M. ; Vasile, E. ; Gartner, M.
Author_Institution :
Inst. of Microtechnol., Bucharest, Romania
Abstract :
Polycrystalline silicon deposited at 570°C and 620°C temperature: as-deposited and after hydrogenation was investigated by spectroellipsometry and transmission electron microscopy. The paper also includes the evaluation of crystallinity fraction of polysilicon via Bruggeman-Effective Medium Approximation and the statistical analysis of grain size
Keywords :
chemical vapour deposition; elemental semiconductors; grain size; hydrogen; semiconductor growth; semiconductor materials; semiconductor thin films; silicon; transmission electron microscopy; 570 degC; 620 degC; Bruggeman-effective medium approximation; LPCVD; Si:H; crystallinity fraction; grain size; hydrogenation; polysilicon; semiconductor; spectroellipsometry; transmission electron microscopy; Crystalline materials; Crystallization; Grain size; Optical films; Optical surface waves; Rough surfaces; Silicon; Surface roughness; Temperature; Transmission electron microscopy;
Conference_Titel :
Semiconductor Conference, 1995. CAS'95 Proceedings., 1995 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-2647-4
DOI :
10.1109/SMICND.1995.494889
