• DocumentCode
    3449810
  • Title

    Nanosecond, pulsed microdischarge UV and VUV sources

  • Author

    Stephens, J. ; Mauch, D. ; Feathers, S. ; Mankowski, J. ; Dickens, J. ; Neuber, A.

  • Author_Institution
    Center for Pulsed Power & Power Electron., Texas Tech Univ., Lubbock, TX, USA
  • fYear
    2015
  • fDate
    24-28 May 2015
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Summary form only given. Using voltage pulses, 10s-100s of nanoseconds in length, microdischarges (MDs) are driven with up to 1 kV, and current levels from 30-150 A. Time-averaged input power levels from 10 W-1+ kW are achieved depending on the selection of pulse width and pulse repetition rate (1 kHz-1 MHz). Using an argon-hydrogen mixture, intense VUV radiation is generated at 121.6 nm (10.2 eV, Lyman-alpha). With this source, instantaneous power levels in excess of 60 watts have been achieved with several watts time-averaged power in the VUV. Additional work utilizing XeCl* (308 nm) and XeF* (351 nm) excimer sources is also reported. Achieved power levels, instantaneous and time-averaged, efficiency, and impurity content are reported. As an application, the MD-UV source is utilized as an alternative to a high power laser for the triggering of high voltage photoconductive SiC switches.
  • Keywords
    argon; discharges (electric); excimers; gas mixtures; hydrogen; photoconducting switches; plasma impurities; plasma sources; silicon compounds; xenon compounds; Ar-H; UV sources; VUV sources; argon-hydrogen mixture; current 30 A to 150 A; electron volt energy 10.2 eV; excimer sources; high voltage photoconductive SiC switches; impurity content; instantaneous power levels; intense VUV radiation; nanosecond pulsed microdischarge; pulse repetition rate; pulse width; time 10 s to 100 s; time-averaged input power levels; wavelength 121.6 nm; wavelength 308 nm; wavelength 351 nm; Feathers; Impurities; Power electronics; Silicon carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Sciences (ICOPS), 2015 IEEE International Conference on
  • Conference_Location
    Antalya
  • Type

    conf

  • DOI
    10.1109/PLASMA.2015.7179942
  • Filename
    7179942